Materials Research for Group IV Semiconductors

Progress towards Spin-Based Light Emission in Group IV Semiconductors

Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. I...

Theory of melting in the group-IV semiconductors

We have calculated the melting curves of germanium and silicon. A model of the group-IV semiconductors was used for which the solid consists of interacting systems of ions, conduction electrons, and covalent bond charges, The liquid state of these elements is metallic, and the model used to describe it consists of interacting systems of ions and conduction electrons. Variational calculations we...

Positron annihilation studies on vacancy defects in group IV semiconductors

Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...

3D continuum phonon model for group-IV 2D materials

A general three-dimensional continuum model of phonons in two-dimensional materials is developed. Our first-principles derivation includes full consideration of the lattice anisotropy and flexural modes perpendicular to the layers and can thus be applied to any two-dimensional material. In this paper, we use the model to not only compare the phonon spectra among the group-IV materials but also ...

Group IV Materials for Low Cost and High Performance Bolometers